Direct Low - Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High - Power Electronics
نویسندگان
چکیده
make GaN a superior material to Si and GaAs for the hightemperature high-power electronic devices, ultrahigh power switches, and microwave-power sources. [ 3 ] However, self-heating limits the performance of GaN devices and further development of GaN technology. [ 4 , 5 ] The temperature rise in high-power AlGaN/GaN heterostructure fi eld-effect transistors (HFETs), which is currently on order of ≈ 180 ° C, [ 6 ]
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